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| BC556, b bc557, a, b, c transistor (pnp) bc558, b features power dissipation p cm : 0.625 w (tamb=25 ) collector current i cm : -0.1 a collector-base voltage v cbo : BC556 -80 v bc557 -50 v bc558 -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage BC556 bc557 bc558 v cbo ic= -100a, i e =0 -80 -50 -30 v collector-emitter breakdown voltage BC556 bc557 bc558 v ceo i c = -2ma , i b =0 -65 -45 -30 v emitter-base breakdown voltage v ebo i e = -100a, i c =0 -6 v collector cut-off current BC556 bc557 bc558 i cbo v cb =- 70 v, i e =0 v cb = -45 v, i e =0 v cb = -25v, i e =0 -0.1 a collector cut-off current BC556 bc557 bc558 i ceo v ce = -60 v, i b =0 v ce = -40 v, i b =0 v ce = -25 v, i b =0 -0.1 a emitter cut-off current BC556 bc557 bc558 i ebo v eb = -5 v, i c =0 -0.1 a dc current gain BC556 bc557 bc558 bc557a BC556b/bc557b/bc558b bc557c h fe(1) v ce =-5v, i c = -2ma 120 120 120 120 180 420 500 800 800 220 460 800 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b = -5ma -0.3 v base-emitter saturation voltage v be(sat) i c = -100ma, i b =-5ma -1 v transition frequency f t v ce = -5v, i c = -10ma f = 100mhz 150 mhz 1 2 3 to-92 1. collector 2. base 3. emitter b c556b/57abc/58b http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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